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| SUM36N20-54P Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS (V) 200 RDS(on) () 0.053 at VGS = 15 V 0.054 at VGS = 10 V ID (A) 36 36 Qg (Typ.) 57 FEATURES * TrenchFET(R) Power MOSFETS * 175 C Junction Temperature * 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS * Power Supply * Lighting Systems D TO-263 G G DS S N-Channel MOSFET Top View Ordering Information: SUM36N20-54P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 100 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 200 25 36 22.6 80 20 20 166 b Unit V A mJ W C 3.12 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 0.75 Unit C/W Document Number: 74295 S-80794-Rev. B, 14-Apr-08 www.vishay.com 1 SUM36N20-54P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 0 V, VGS = 25 V VDS = 200 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 200 V, VGS = 0 V, TJ = 100 C VDS = 200 V, VGS = 0 V, TJ = 150 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea RDS(on) VGS = 15 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 100 C VGS = 10 V, ID = 20 A, TJ = 150 C Forward Transconductancea gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr c Symbol Test Conditions Min. 200 2.5 Typ. Max. Unit 4.5 100 300 1 25 250 V nA A A 40 0.044 0.0435 0.054 0.053 0.098 0.130 25 3100 VDS = 15 V, ID = 20 A S Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 100 V, VGS = 15 V, ID = 50 A VDS = 100 V, VGS = 10 V, ID = 50 A f = 1 MHz VDD = 100 V, RL = 2 ID 50 A, VGEN = 10 V, Rg = 1 300 135 85 57 14 20 1.2 16 170 27 9 b pF 127 85 nC 1.8 25 260 42 18 td(off) tf ns Source-Drain Diode Ratings and Characteristics TC = 25 C Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr IRM(REC) Qrr ta tb 36 80 IF = 20 A, VGS = 0 V 0.86 116 9 IF = 40 A, di/dt = 100 A/s 0.53 84 32 1.5 175 14 0.8 A V ns A C nS Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74295 S-80794-Rev. B, 14-Apr-08 SUM36N20-54P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 VGS = 15, 12, 10, 8 V 80 ID - Drain Current (A) 6V 60 ID - Drain Current (A) 64 80 48 TC = 125 C 32 40 20 5V 0 0 3 6 9 12 15 16 25 C - 55 C 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 120 T C = - 55 C 0.060 25 C 80 RDS(on) - On Resistance () 0.065 Transfer Characteristics 100 gfs - Transconductance (S) 0.055 VGS = 10 V 0.050 VGS = 15 V 0.045 60 125 C 40 20 0 0 10 20 30 40 50 60 0.040 0 16 32 48 64 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance 0.18 I D = 20 A 0.15 RDS - On-Resistance () C - Capacitance (pF) 3360 4200 On-Resistance vs. Drain Current Ciss 0.12 2520 0.09 TJ = 125 C 1680 0.06 TJ = 25 C 0.03 0 3 6 9 12 15 840 Crss Coss 0 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Capacitance www.vishay.com 3 Document Number: 74295 S-80794-Rev. B, 14-Apr-08 SUM36N20-54P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 15 VDS = 50 V, 100 V ID = 50A RDS(on) - On-Resistance (Normalized) 2.9 ID = 20 A 2.4 VGS = 10 V 1.9 VGS = 15 V 1.4 VGS - Gate-to-Source Voltage (V) 12 9 6 3 0.9 0 0 16 32 48 64 80 96 0.4 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 100000 0.7 On-Resistance vs. Junction Temperature 10000 I S - Source Current (A) V GS(th) Variance (V) TJ =150 C 1000 TJ = 25 C 0.100 0.2 ID = 5 mA - 0.3 - 0.8 ID = 250 A - 1.3 0.010 - 1.8 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 2.3 - 50 - 25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Temperature (C) Source-Drain Diode Forward Voltage 250 I D = 10 mA 240 V (BR)VDSS (normalized) 150 C I Dav A 100 Threshold Voltage 230 25 C 10 220 210 200 190 - 50 - 25 0 25 50 75 100 125 150 175 1 0.00001 0.0001 0.001 t av - (s) 0.01 0.1 TJ - Temperature Junction (C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Single Pulse Avalanche Current Capability vs. Time Document Number: 74295 S-80794-Rev. B, 14-Apr-08 SUM36N20-54P Vishay Siliconix THERMAL RATINGS 40 100 Limited by R DS (on)* 32 ID - Drain Current (A) 100 s I D - Drain Current (A) 10 24 1 ms 1 TC = 25 C Single Pulse 16 10 ms 100 ms DC 8 0 0 25 50 75 100 125 150 0.1 0.1 TC - Case Temperature (C) 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS (on) is specified 1000 Maximum Drain Curent vs. Case Temperature 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Safe Operating Area 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74295 Document Number: 74295 S-80794-Rev. B, 14-Apr-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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